利用片上超材料构建单芯片太赫兹双频吸波器  

Fabricationona Single Chip Terahertz Dual-Band Absorber by Usingon-Chip Metamaterial Structure

作　　者：杨曙辉[1,2] 康劲[1] 陈迎潮 

机构地区：[1]北京信息科技大学信息与通信工程学院,北京100101 [2]南卡罗来纳大学电气工程系,哥伦比亚美国sc29208

出　　处：《北京邮电大学学报》2015年第3期126-129,共4页Journal of Beijing University of Posts and Telecommunications

基　　金：国家自然科学基金项目(61171039)

摘　　要：利用65 nm互补金属氧化物半导体(CMOS)工艺,设计了一种新的单芯片超材料结构太赫兹吸波器,面积约为0.60 mm×0.65 mm,包含75个吸波单元.吸波单元图案采用CMOS工艺中顶层铜金属,厚度为3.2μm,设计为正八边形和正方形开口谐振环的组合结构;介质层由无掺杂硅玻璃、碳化硅、氮化硅等组成,厚度为9.02μm;介质层背面短线采用CMOS工艺中的第一层金属,厚度为0.2μm.仿真结果表明,该吸波器在0.921 THz、1.181 THz两个频率处达到最大吸收率,分别为97.84%和95.76%.克服了采用砷化镓、薄膜工艺实现的太赫兹吸波器与CMOS工艺兼容问题,有利于在大规模集成电路中实现.A single-chip metamaterial absorber in terahertz band is proposed,which is based on 65 nm complementary metal-oxide semiconductor（ CMOS） process. The chip area is approximately 0. 60 mm by0. 65 mm and totally contains 75 absorbing cells. The periodic cell of the absorber is made of octagon-splitand square-split ring resonators,which are designed by employing a 3. 2 μm copper on the top layer in the CMOS technology. The dielectric spacer consists of un-doped silicate glass,silicon carbide and silicon nitride with the total thickness of 9. 02 μm. On the back of dielectric is made up a short copper line with the thickness of 0. 2 μm. It has been found that the maximum absorptivity,based on HFSS simulations,has achieved 97. 84% at 0. 921 THz and 95. 76% at 1. 181 THz,respectively. In comparison with other terahertz absorbers fabricated by using gallium arsenide or film technology,this proposed absorber overcomes the compatibility issues appeared in CMOS process. In addition,it is found that this structure can be easily implemented in large scale integrated circuits.

关 键 词：超材料 开口谐振环 太赫兹吸波器 等效电路 吸收率 

分 类 号：TN81[电子电信—信息与通信工程]