Correlation between the structural, morphological, optical, and electrical properties of In_2O_3 thin films obtained by an ultrasonic spray CVD process  

作　　者：A.Bouhdjer A.Attaf H.Saidi H.Bendjedidi Y.Benkhetta I.Bouhaf 

机构地区：[1]Laboratory of Semiconductors Materials,University of Med Kheider

出　　处：《Journal of Semiconductors》2015年第8期9-14,共6页半导体学报（英文版）

摘　　要：Indium oxide （In2O3） thin films are successfully times by an ultrasonic spray technique using Indium chloride deposited on glass substrate at different deposition as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrys- talline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the （222） plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the （400） plane. The surface morphology of the In2O3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The trans- mittance improvement of In2O3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity （10-2 Ω.cm）, and relatively high transmittance （- 93%）.Indium oxide （In2O3） thin films are successfully times by an ultrasonic spray technique using Indium chloride deposited on glass substrate at different deposition as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrys- talline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the （222） plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the （400） plane. The surface morphology of the In2O3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The trans- mittance improvement of In2O3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity （10-2 Ω.cm）, and relatively high transmittance （- 93%）.

关 键 词：indium oxide deposition time ultrasonic spray optical and electrical properties 

分 类 号：TN304.055[电子电信—物理电子学]