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机构地区:[1]Institute of Semiconductors, Chinese Academy of Sciences
出 处:《Journal of Semiconductors》2015年第8期124-130,共7页半导体学报(英文版)
摘 要:This paper describes the implementation ofan RF receiver front-end for the 2.4 GHz industrial scientific medical band under TSMC 0.13 μm CMOS technology; it comprises a low noise amplifier (LNA) which uses an added gate-source capacitor for low power performance and a dual-converter composed of a single-balanced active RF mixer and double-balanced passive IF mixer. Dual-down-conversion technique is used for reducing power. A 2.4 GHz low power low-IF RF receiver front-end is proposed. An LNA for rejecting image signal, an inductor- capacitor (LC) tank is used in series with source of input-stage transistor of the RF mixer, and combined with the LC load of the LNA, 30-dB image rejection is realized. Fabricated in a 0.13 μm CMOS process, the proposed chip occupies 0.42 mm2 area, achieves 4 dB noise figure, -22 dBm IIP3 and 37 dB voltage gain dissipating only 4.2-mW under 1.2-V supply.This paper describes the implementation ofan RF receiver front-end for the 2.4 GHz industrial scientific medical band under TSMC 0.13 μm CMOS technology; it comprises a low noise amplifier (LNA) which uses an added gate-source capacitor for low power performance and a dual-converter composed of a single-balanced active RF mixer and double-balanced passive IF mixer. Dual-down-conversion technique is used for reducing power. A 2.4 GHz low power low-IF RF receiver front-end is proposed. An LNA for rejecting image signal, an inductor- capacitor (LC) tank is used in series with source of input-stage transistor of the RF mixer, and combined with the LC load of the LNA, 30-dB image rejection is realized. Fabricated in a 0.13 μm CMOS process, the proposed chip occupies 0.42 mm2 area, achieves 4 dB noise figure, -22 dBm IIP3 and 37 dB voltage gain dissipating only 4.2-mW under 1.2-V supply.
关 键 词:FRONT-END LOW-IF low power LNA MIXER
分 类 号:TN851[电子电信—信息与通信工程]
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