Sc_2O_3对水热法生长ZnO晶体的影响  

Effects of Sc_2O_3 Addition on ZnO Single Crystals Prepared by Hydrothermal Method

作　　者：左艳彬[1] 周海涛[1] 王金亮[1] 何小玲[1] 任孟德[1] 张昌龙[1] 

机构地区：[1]中国有色桂林矿产地质研究院有限公司广西超硬材料重点实验室国家特种矿物材料工程技术研究中心,桂林541004

出　　处：《人工晶体学报》2015年第7期1758-1763,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51102057);广西自然科学基金(2013GXNSFBA019262);科技部科研院所专项(2012EG115007)

摘　　要：在分别添加0．1wt％，0．2wt％和0．3％wt％Sc203的水热体系中得到了ZnO单晶体。研究了杂质，特别是sc对ZnO水热生长机制的影响。sc及其在碱性溶液中形成阴离子配位中间体基团（例如Sc（OH）4-）可以吸附到ZnO的（0001）和（0001）面，导致这两个极性面发生非极性生长，形成规则六棱柱的形貌。在室温下测得的电阻率和载流子浓度显示：即使所得晶体的钪含量仅有8-13ppm，Sc掺杂ZnO仍是高导电性的，电阻率低于5．6×10^-2Q·cm，载流子浓度在0．9～1．6×10^18electrons／cm^3。表征了切割自＋c区和一c区的晶片的zn面和0面的室温光致发光用于评价光学性能。ZnO single crystals were prepared by hydrothermal method with 0. l wt% , 0.2wt% and 0. 3wt% Sc203 addition. The hydrothermal growth mechanism, as influenced by impurities, particularly Sc^3＋ , was investigated. Scandium ions or scandium coordinated anionic groups such as Sc （ OH ） 4 in alkaline solutions tend to absorb on both （0001） and （0001） faces of ZnO, resulting in a non-polar growth on the two polar faces; the grown crystals exhibited a six-prism crystal morphology. The resistivity and carrier concentration measured at room temperatures indicate that the scandium-doped ZnO, which contains only about 8-13 ppm of scandium in the crystals, are of high conductivity, with a resistivity lower than 5.6×10^-2 Ω cm and Hall carrier concentration of 0.96-1.6 × 10^18 electrons/cm^3 at room temperature. Photoluminescence （PL） at room temperature on the as-grown surface Zn-and O-faces cutting from ＋ c and -c sectors is measured for evaluating the optical properties.

关 键 词：钪掺杂ZnO 水热法 生长机理 霍尔效应 光致发光 

分 类 号：O74[理学—晶体学]