一种有限差分IGBT/FWD模型研究  

Studies on a Finite Difference IGBT/FWD Model

作　　者：孟金磊[1,2,3,4] 宁圃奇[1,3,4] 温旭辉[1,3,4] 张栋[1,2,3,4] 

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院大学,北京102209 [3]中国科学院电力电子与电气驱动重点实验室(电工研究所),北京100049 [4]电驱动系统大功率电力电子器件封装技术北京市工程实验室,北京100190

出　　处：《电源学报》2015年第4期46-52,共7页Journal of Power Supply

基　　金：国家科技支撑计划课题项目(2013BAG02B01)~~

摘　　要：提出了一种适用于多种IGBT/FWD芯片结构的有限差分仿真模型。该模型具有较高的精度,良好的计算速度和收敛性,并能反映温度变化对IGBT/FWD特性的影响。首先深入分析了IGBT/FWD芯片的物理建模过程,然后通过双脉冲实验验证了模型准确性和温度影响特性,为解决精确测量电流的问题,提出了一种使用刺刀螺母连接器和采样电阻测量电流的方法。A novel finite difference modeling method for various structures of insulated gate bipolar transistor/free wheeling diode（IGBT/FWD） chips is presented. The novel model has high accuracy, high calculation speed and stable convergence. The method can be extended to characterize the temperature effect of IGBT/FWD. After developing the models of IGBT/FWD chips, double-pulse tests were conducted and thus verified the accuracy of the presented method under different ambient temperatures. To improve the testing quality, a novel current measuring method with a bayonet nut connector and sampling resistors was introduced in the tests.

关 键 词：有限差分模型 电流测量 IGBT 

分 类 号：TN386[电子电信—物理电子学]