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机构地区:[1]江南大学轻工过程先进控制教育部重点实验室,无锡214122
出 处:《电源学报》2015年第4期109-113,共5页Journal of Power Supply
摘 要:绝缘栅双极型晶体管IGBTs(insolated gate bipolar transistor)串联应用实现的关键在于动态均压。首先,从理论上分析了传统IGBT控制电路中寄生电容存在的主要原因,以及其对IGBT串联均压产生的影响;然后,提出了一种改进型控制电路,与传统的控制电路相比,改进型控制电路从主电路获取控制信号驱动IGBT所需功率,无需外接直流电源和电源隔离,减少了寄生电容的引入,能在一定程度改善IGBT的串联均压;最后,通过仿真和实验验证了该电路的有效性。在工程应用上具有一定的参考价值。The key of insolated gate bipolar transistor(IGBT) series-connected application is to make the IGBT series- connected in a circuit being voltage-balanced. Firstly, This article analyzes the effects of parasitic capacitances in the series connection of IGBT, which exist naturally due to control circuit. And then an improved control circuit is introduced, which is based on the power of gate driver supplied by the main circuit. Without external power supplies and the necessary insulation components, this solution has the advantage over the classical supply to eliminate parasitic capacitances. Finally, the Simulation and experimental data show that the circuit is effective and feasible. It will be reference in practice.
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