四氟化硅中痕量金属杂质的检测  

Analysis of Four Silicon Tetrafluoride Gas Metal Particles

作　　者：张文娟[1] 唐安江[1] 韦德举[1] 

机构地区：[1]贵州理工学院,贵州贵阳550003

出　　处：《广州化工》2015年第15期134-136,共3页GuangZhou Chemical Industry

基　　金：贵州理工学院科学基金项目:电子气体主要杂质分析--SiF4中痕量金属杂质的检测资助(合同编号:XJ2K20130813)

摘　　要：Si F4用于作光导纤维、太阳能电池等电子工业等领域时需要有较高纯度。本文重点介绍了Si F4的杂质元素分析,用吸收剂吸收后,除去硅和氟元素后测定其他元素。为了更准确的测量,我们采用电感耦合等离子体发射光谱法同时测定Si F4气体中可能存在的铝、钙、碳、铁、镍、铬、铜、锌、磷、硼、铝、砷、镓、锑、铟等微量金属元素,确定杂质成分。并且同时检测空白样,对比杂质成分,进行分析。SiF4 used in the field of optical fiber, solar cells and other electronic industries need to have a higher purity.The impurity element analysis of SiF4 was mainly introduced, and after absorbing the absorbent, other elements we removed after removal of silicon and fluorine.For more accurate measurements, we adopted inductively coupled plasma emission spectrometry for the simultaneous determination of trace elements in SiF4 gas may exist in aluminum, calcium, carbon, iron, nickel, chromium, copper, zinc, phosphorus, boron, aluminium, arsenic, gallium, antimony and indium, impurity composition was determined.At the same time, the blank sample was detected, the impurities was compared and analyzed.

关 键 词：四氟化硅 金属粒子 ICP-AES 

分 类 号：O69[理学—化学]