垂直布里奇曼法生长碲锌镉晶体的工艺条件优化  

Technical optimization of Cd Zn Te crystal growth by vertical Bridgman method

作　　者：范叶霞[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2015年第8期934-938,共5页Laser & Infrared

摘　　要：分析了利用垂直布里奇曼法生长碲锌镉晶体的工艺条件,如坩埚的材质和形状、炉体温场、固液界面形状、生长速率以及采用籽晶等生长条件对晶体单晶率和质量的影响,并提出了优化垂直布里奇曼法生长Cd Zn Te晶体的条件。In this paper,the effects of some technologies of CdZnTe crystal growth by vertical Bridgman method on sin-gle crystalline ratio and quality are analyzed,such as material and shape of crucible,thermal field of furnace,shape of solid-liquid interface,growth rate and use of seed.Some optimal techniques for CdZnTe crystal growth by vertical Bridgman method are summarized.

关 键 词：垂直布里奇曼法 PBN 坩埚 籽晶生长 碲锌镉晶体 

分 类 号：TN213[电子电信—物理电子学]