Sn掺杂对Mn3Zn1-xSnxN化合物负热膨胀行为和电输运性能的影响  

The Effects of Sn Doping on the Negative Thermal Expansion and Electronic Transport Properties in Mn_3Zn_(1- x)Sn_xN Compounds

作　　者：史可文 孙莹[1] 邓司浩[1] 王蕾[1] 胡鹏伟[1] 王聪[1] 

机构地区：[1]北京航空航天大学物理系,凝聚态物理与材料物理研究中心,北京100191

出　　处：《中国材料进展》2015年第7期531-535,544,共5页Materials China

基　　金：国家自然科学基金资助项目(51172012,51472017);高等学校博士学科点专项科研基金资助

摘　　要：采用固相反应法成功制备了Mn3Zn1-xSnxN(x=0.05,0.1,0.15,0.2,0.3)系列化合物,研究了Sn替代Zn对Mn3Zn1-xSnxN化合物的热膨胀、熵变和电输运性能的影响。Mn3Zn N化合物在磁相变温区以下具有低热膨胀行为,随着Sn掺杂量的增加,Mn3Zn1-xSnxN系列化合物的低膨胀温区(LTE)逐渐提高到室温以上。同时,低膨胀温区内的线膨胀系数逐渐升高。然而,Sn含量的增加对磁相变附近的负热膨胀行为未产生明显的影响。电阻测量结果表明Mn3Zn1-xSnxN化合物低温(50 K以下)电输运出现反常。随着Sn含量的增加,Mn3Zn1-xSnxN化合物在低温下出现的电阻率极小值现象逐渐减弱,最终在x=0.2处消失。拟合结果表明,该系列化合物中的电子-电子散射随掺杂量增加逐渐增强,出现明显的费米液体行为。由于丰富的低膨胀性能和独特的电输运性能,该化合物在功能材料领域将具有重要的研究价值和应用前景。The Mn3 Zn1 -xSnxN （x = 0. 05, 0. i, 0. 15, 0. 2, 0. 3 ） compounds were synthesized by the solid-state reaction method. The effects of Sn doping on the thermal expansion behavior and electronic transport properties were investigated for these compounds. The transition temperature increases and the difference of the volume does not change as the doping of Sn. When x = 0. 3, the negative thermal expansion behavior occurs at room temperature, indicating that the range of the low thermal expansion （LTE） broadened to room temperature with the coefficient of thermal expansion in this range increasing from 2. 35 to 8.66 × 10-6/K. However, Sn doping can change the electro interaction at low temperature in Mn3Znl_,SnxN compounds. With Sn content increasing, the multiple unusual minima behaviors disappeared, while the electro-electro interactions are increased to suggest a highly correlated Fermi liquid behavior in x = 0. 2 and 0. 3 compounds. The abundant thermal expansion and electronic transport properties make this serial compounds attractive for the interesting physical mechanism study and potential applications.

关 键 词：负热膨胀 相变 电阻率 电子-电子散射 

分 类 号：O551.3[理学—热学与物质分子运动论]