柔性CIGS薄膜太阳电池的激光划线研究  

Laser scribing of flexible CIGS thin-film solar cells

作　　者：闫礼[1] 冯洋[1] 刘洋[1] 梅林颖[1] 乔在祥[1] 

机构地区：[1]中国电子科技集团公司第十八研究所重点实验室,天津300384

出　　处：《电源技术》2015年第8期1678-1681,共4页Chinese Journal of Power Sources

摘　　要：单片集成是Cu(In,Ga)Se2(CIGS)薄膜太阳电池组件的一种形式,可以降低电流和电阻损失,制备的关键步骤是通过划线实现子电池间的隔离和互联。超短脉冲激光划线能降低死区宽度,提高划线质量。为实现一种新型结构CIGS薄膜太阳电池组件的单片集成,采用1 064 nm波长皮秒激光对PI衬底CIGS薄膜太阳电池划线。通过对不同工艺条件划线沟道深度、结构及成分的研究发现,可以实现选择性移除CIGS薄膜太阳电池材料层,露出PI衬底或钼背电极层,划线沟道底部平整、干净,划线两侧整齐,宽度在100μm左右。The monolithic integration is a form of Cu（In,Ga）Se2 （CIGS） thin-film photovoltaic modules, reducing the current and ohmic loss. One of the critical fabricating steps is to realize the insulation and connection between sub-cells by scribing. Ultra-short pulse laser scribing can decrease the dead zone area and improve scribe quality. To realize the novel structure of monolithic integration, the picosecond lasers with 1 064 nm wavelength were applied to scribe CIGS solar cells prepared on polyimide substrate. The scribing depth, trench component and structural properties of different processes were investigated. The results indicate that the selective thin film of CIGS solar cell can be ablated. The scribing lines are straight on both sides. The bottom of trench is smooth and clean. The width of pattern is about 100μm.

关 键 词：CIGS 激光划线 皮秒工艺 选择性移除 

分 类 号：TM914[电气工程—电力电子与电力传动]