化学水浴法制备大面积CdS薄膜及其性能研究  

Preparation of large area CdS thin film by chemical bath deposition and its properties

作　　者：李巍[1] 张旭[1] 王赫[1] 乔在祥[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2015年第8期1685-1687,共3页Chinese Journal of Power Sources

摘　　要：采用化学水浴法在聚酰亚胺(PI)衬底上沉积铜铟镓硒(CIGS)薄膜太阳电池的缓冲层Cd S薄膜。研究了反应溶液浓度和沉积时间对大面积Cd S薄膜表面形貌和晶体结构的影响,优化了化学水浴沉积大面积Cd S薄膜工艺。采用5×10-3mol/L的(CH3COO)2Cd、0.05 mol/L的SC(NH2)2、1.5×10-2mol/L的CH3COONH4、6.5×10-3mol/L的NH3·H2O配置的反应溶液,75℃恒温水浴,沉积时间10 min作为工艺条件,在CIGS吸收层上沉积了面积为30 cm×30 cm、具有较好结晶质量的Cd S薄膜。在此基础上完成柔性CIGS薄膜太阳电池制备,在AM 1.5,25℃条件下,面积约为2.5 cm2的柔性CIGS薄膜太阳电池最高光电转换效率达到9.12%。CdS thin film as buffer layer of CIGS solar cell was synthesized by chemical bath deposition （CBD） process. The influence of reaction solution and deposition time on the morphology and structure of large area CdS thin film was investigated. The optimized deposition process condition is that bathing temperature of 75 ℃, the deposition time of 10 min; the concentration of （CH3COO）2Cd, SC（NH2）2, CH3COONH4and the ammonia are 5 × 10-3, 0.05, 1.5×10-2 and 6.5 × 10-3 mol/L, respectively. The 30 cm×30 cm CdS thin films were deposited on CIGS absorption layer, and the flexible CIGS thin film solar cell was fabricated. The photoelectric conversion efficiency of 2.5 cm2CIGS thin film solar cell is up to 9.12% at AM 1.5 and 25 ℃.

关 键 词：大面积CdS(硫化镉)薄膜 化学水浴工艺 CIGS薄膜太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]