H_2稀释比对RF-PECVD制备a-Si:H/nc-Si:H薄膜的光电特性的影响  

Influence of H_2 Dilution on the Optical and Electronical Properties of a-Si: H / nc-Si: H Films Deposited by RF-PECVD

作　　者：程自亮 蒋向东[1] 王继岷[1] 刘韦颖 连雪艳 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2015年第3期485-488,共4页Chinese Journal of Electron Devices

摘　　要：研究了H2稀释比对a-Si:H/nc-Si:H薄膜光电特性及微结构的影响。采用RF-PECVD法,以高纯Si H4及H2/Si H4混合气体为反应气源交替反应制备样品,并通过紫外-可见光分光光度计、椭偏仪及Keithley 4200、XRD对样品进行分析测试。实验表明:在纳米级厚度的a-Si:H薄膜基础上,随着第二反应气H2/Si H4混合气中H2比率(99%、97%、95%、92%、80%)的升高,沉积速率持续下降,薄膜消光系数、禁带宽度以及电导率呈现先增大后减小的趋势。针对实验现象,结合薄膜生长机理对实验结果原因进行了分析。The effect of H2 dilution on the microstructure optical and electronical properties of a-Si： H / nc-Si： H films was investigated. The films samples were fabricated by RF-PECVD using high purity Si H4 and H2/ Si H4 mixed with a ratio gas as reaction gas sources in a circulatory way and tested by ultraviolet-visible-spectrometer,ellipsometer,Keithley 4200 and XRD. The results indicated that on the base of the nanoscale thickness a-Si： H film,with the rising of H2（ 99%,97%,95%,92%,80%） in the second reaction gas H2/ Si H4,the deposition rate reduce. In addition,energy gap,extinction coefficient and conductivity increase first and then decrease. Finally,the microscopic growing mechanism of the film was elucidated to explain the results of the experiment.

关 键 词：a-Si:H/nc-Si:H 氢稀释 RF-PECVD(射频等离子体化学气相沉积) 光电性能 生长机理 

分 类 号：TB742[一般工业技术—材料科学与工程] O756[一般工业技术—真空技术]