Si基多层Ge量子点近红外光电探测器研制  

Study of Si-Based Multilayer Ge Quantum Dots Near-Infrared Photodetector

作　　者：汪建元[1] 陈松岩[1] 李成[1] 

机构地区：[1]厦门大学物理与机电工程学院,福建厦门361005

出　　处：《传感技术学报》2015年第5期660-664,共5页Chinese Journal of Sensors and Actuators

基　　金：国家重大科学研究计划(2012CB933503)

摘　　要：采用超高真空化学气相沉积(UHV/CVD)技术在Si衬底上外延生长了PIN结构多层Ge量子点探测器材料。PIN探测器结构由N型Si衬底,多层Ge量子点吸收区,和原位掺杂P型Si盖层构成,电极分别制作于N-Si和P-Si上,以获得好的欧姆接触。制备的Si基Ge量子点光电探测器具有较低的暗电流密度(-1 V偏压下为7.35×10-6A/cm2),与Si相比,探测波长延伸到1.31μm波段。The structure of multilayer Ge quantum dots （QDs） was eptaxial grown on Si substrate by ultra-high vacu- um chemical vapor deposition（UHV/CVD） technique for detector fabrication. The intrinsic multilayer Ge QDs were acted as an absorption region, while the N-Si substrate and the in situ capped P-Si layer were chosen for the forma- tion of ohmic contact. The fabricated photodetector has a low dark current density（ 7.35× 10-6 A/era2 at -1 V） , and the wavelength limit is extended to 1.31 p^m compared with Si photodetector.

关 键 词：多层Ge量子点 近红外光电探测器 UHV/CVD系统 自组织生长 

分 类 号：TN364.1[电子电信—物理电子学]