CdS/CuInS_2/TiO_2复合纳米薄膜光电性能的研究  

Photoelectric Performance of CdS/CuInS_2/TiO_2 Composite Nanofilms

作　　者：武春霞[1] 王莹莹 于丽敏[3] 韩敏敏[3] 张晓亮[1] 

机构地区：[1]河北工程大学装备制造学院,河北邯郸056038 [2]邢台市环境监测站,河北邢台054000 [3]中国科学院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000

出　　处：《广东化工》2015年第15期12-13,9,共3页Guangdong Chemical Industry

基　　金：河北省自然科学基金项目(E2015402088);邯郸市科学技术研究与发展计划项目(1421103054-3)

摘　　要：利用连续离子层吸附反应(SILAR)法在Ti O2纳米棒阵列表面沉积生长了Cu In S2和Cd S量子点,采用FESEM表征了复合纳米薄膜的结构和形貌,采用紫外可见分光光度计和电化学工作站表征了薄膜的光学和光电性能。当Cu In S2和Cd S薄膜循环沉积次数均为5次时,薄膜的光电响应最强,光电响应程长为20μA/cm2。SILAR method was used to assemble Cu In S2 and Cd S quantum-dots onto Ti O2 nanorod arrays. The structure and morphology of the composite nanofilms was characterized by using FESEM. The optical and photoelectric properties of the composite nanofilms were observed by UV spectrophotometer and electrochemical workstation. When the deposition times of the Cu In S2 and Cd S film are 5, the photoelectric performance of composite nanofilms is the best, and the range of photoelectric response is 20 μA/cm^2.

关 键 词：SILAR法 量子点 纳米薄膜 光电性能 

分 类 号：O646.54[理学—物理化学]