沉积次数对CdS/TiO_2复合纳米薄膜光电性能的影响  

The Effect of Deposition Times on the Photoelectric Property of CdS/TiO_2 Composite Nanofilms

作　　者：武春霞[1] 王莹莹 韩敏敏[3] 于丽敏[3] 张晓亮[1] 

机构地区：[1]河北工程大学装备制造学院,河北邯郸056038 [2]邢台市环境监测站,河北邢台054000 [3]中国科学院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000

出　　处：《广东化工》2015年第16期18-19,共2页Guangdong Chemical Industry

基　　金：河北省自然科学基金项目(E2015402088);邯郸市科学技术研究与发展计划项目(1421103054-3)

摘　　要：采用水热法在FTO导电玻璃基底表面制备了结构规整的TiO2纳米棒阵列,利用连续离子层吸附反应(SILAR)法在TiO2纳米棒阵列表面沉积生长了CdS量子点,采用紫外可见分光光度计和电化学工作站表征了薄膜的光学和光电性能,随着CdS循环次数的增加,薄膜的光电响应越明显,当CdS循环沉积次数为9次时,薄膜的光电响应程长约为514μA/cm2。TiO2 nanorod arrays were prepared on FTO substrates by using hydrothermal method. SILAR method was used to assemble Cd S quantum-dots onto TiO2 nanorod arrays. The optical and photoelectric properties of the composite nanofilms were observed by UV spectrophotometer and electrochemical workstation. The photoelectric response of Cd S films increase with the increasing of Cd S deposition time. When the deposition times of the Cd S film are 9, the range of photoelectric response is 514 μA/cm2.

关 键 词：SILAR法 硫化镉 TiO2纳米棒阵列 光电性能 

分 类 号：O646.54[理学—物理化学]