BeO陶瓷基片表面平整化改性工艺研究  

Study on the Smooth Modification of BeO Ceramic Substrate

作　　者：曾理[1] 陈宏伟[1] 雷贯寰[1] 张鹏[1] 张继华[1] 杨传仁[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2015年第4期726-728,共3页Piezoelectrics & Acoustooptics

摘　　要：采用在BeO陶瓷基片表面被覆玻璃釉的方法实现基片表面的平整化改性,并利用台阶测试仪、扫描电子显微镜(SEM)等手段研究不同烧结制度对被釉基片表面粗糙度的影响。实验结果表明,相较于抛光处理的BeO陶瓷基片的轮廓平均偏差和算数均方根偏差值分别为62.8nm和141.9nm,被釉平整化改性的BeO陶瓷基片的参数值可分别降至18.2nm和24.9nm,可实现高效率、低成本的BeO陶瓷基片平整化改性。In this paper, a modification method for BeO ceramic substrate with supper smooth in surface by coat- ing a layer of glass glaze was proposed. The step tester and AFM were used to study the influence of different sinte- ring system on the glaze surface roughness. The results showed that the modified BeO ceramics substrate was smoother than the polished BeO ceramics substrate. The arithmetic average roughness（Ra） and root-mean-square （RMS） value of the polished BeO ceramics substrate were 62.8 nm and 141.9 nm respectively, while the glazed modified BeO ceramics substrate were reduced to 18.2 nm and 24. 9 nm respectively. The high efficiency and low cost of modified BeO ceramic substrate was obtained.

关 键 词：基片改性 表面粗糙度 热导率 

分 类 号：TN384[电子电信—物理电子学] TB332[一般工业技术—材料科学与工程]