GD-MS法测定太阳能级多晶硅中痕量杂质元素含量  

Determination on the Trace Impurity Elements Content in Solar Grade Silicon by GD-MS Method

作　　者：杨赟金[1] 杨海岸[1] 

机构地区：[1]昆明冶金研究院,云南昆明650031

出　　处：《云南冶金》2015年第4期69-72,共4页Yunnan Metallurgy

摘　　要：采用辉光放电质谱法(GD-MS)测定太阳能级多晶硅中B、Na、Mg、Al、K、Ca、Ti等20个痕量杂质元素。研究了GD-MS测定多晶硅的预溅射时间,优化和选择了仪器的工作参数、分辨率和用于分析的待测元素同位素。并将分析结果与电感耦合等离子体质谱法(ICP-MS)的分析结果进行对照以验证GD-MS无标分析的准确程度。实验结果表明,GD-MS法对B、Na、Mg、Al、K、Ca、Ti等元素测定结果的相对标准偏差(RSD)都小于25%,二者测定结果基本一致。Twenty trace impurities, such as B, Na, Mg, A1, K, Ca, Ti and so on in solar grade silicon shall be determined by glow discharge mass spectrometry method （GD-MS）. The pre - sputtering time for the determination of polysilicon by GD-MS is re- searched, the working parameters, resolution ratio of the instruments and the isotope elements for the determined elements shall be optimized and selected. The analysis results of the above mentioned method compares to the analysis results of inductively coupled plasma mass spec- tremetry （ ICP - MS） to verify the accuracy degree of the GD-MS standardless quantitative analysis. The test results show, the relative stand- ard deviation （RSD） of the determination results of B, Na, Mg, Al, K, Ca, Ti and so on by GD-MS method are all less than 25%, the de- termination results of the two methods are basically consistent.

关 键 词：太阳能级多晶硅 辉光放电质谱法 准确度 精密度 

分 类 号：O657.63[理学—分析化学]