基于遗传算法的绝缘子泄漏电流估算  

Evaluation of Leakage Current of Insulators Based on the Genetic Algorithm

作　　者：张友鹏[1] 伍亚萍[1] 董海燕[1] 周郁[1] 陈志东[1] 

机构地区：[1]兰州交通大学自动化与电气工程学院,兰州730070

出　　处：《高电压技术》2015年第8期2757-2763,共7页High Voltage Engineering

基　　金：铁道部科技研究开发计划(2012J007-C);高校基本科研业务费专项资金(212099);兰州交通大学青年科学基金(2013038)~~

摘　　要：为了探索绝缘子泄漏电流与各因素之间的本质联系,确定出它们之间的具体函数关系,采用遗传算法(GA)得到了相对湿度Hr、等值附盐密度ρESDD及作用电压U与泄漏电流幅值Ih的对应关系。首先进行了单片瓷绝缘子人工污秽试验,利用泄漏电流测量系统记录了泄漏电流波形并进行了分析;其次利用遗传算法得到了Hr、ρESDD、U与Ih的函数关系;最后将该方法与最小二乘法进行了比较。结果表明:Ih与Hr、ρESDD和U均有关系,影响程度从大到小依次为ρESDD、Hr、U;相较于利用最小二乘法估算泄漏电流与各因素之间的相关系数,遗传算法不仅确定出它们之间的具体函数形式,而且提高了估算的准确性。仿真结果表明利用遗传算法估算泄漏电流幅值的方法是有效可行的,该研究结果可以为工程中基于泄漏电流污秽度的评估提供参考。In order to explore the fundamental relation and its corresponding functions between leakage current in insu- lators and its influential factors, we studied the relationship among leakage current Ih, relative humidity density Hr, equivalent salt deposit densityρSDD, and applied voltage U using the genetic algorithm （GA）. Firstly, artificial pollution tests were conducted on single suspension insulators; waveforms of leakage current were recorded and analyzed using a leakage current monitoring system. Secondly, the functional relationship among Hr,ρesDD, U, and Ih was obtained by GA. Finally, we compared this method with the least square method. The results show that Ih is related to ,OESDD, Hr, and U in an order of influence from large to small. Compared with using the least square method to estimate the correlation coeffi- cient between leakage current and the influencing factors, using GA can not only identify the functions connecting the factor, but also improve the accuracy of estimation. The simulation result shows that GA is effective and feasible to esti- mate leakage current. The research can be used as a reference for contamination degree estimation of insulators based on leakage current evaluation.

关 键 词：绝缘子 泄漏电流 相对湿度 等值附盐密度 作用电压 遗传算法 

分 类 号：TM216[一般工业技术—材料科学与工程]