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作 者:Yi Li Jun Zhu Hui Chu Junfeng Wei Feng Liu Mei Lv Junwang Tang Bing Zhang Jianxi Yao Zhipeng Huo Linhua Hu Songyuan Dai
机构地区:[1]CAS Key Laboratory of Novel Thin Film Solar Cells [2]Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences [3]Department of Modern Physics, University of Science and Technology of China [4]Department of Chemical Engineering, University College London [5]State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources [6]North China Electric Power University [7]Beijing Key Lab of Novel Thin Film Solar Cells
出 处:《Science China Chemistry》2015年第9期1489-1493,共5页中国科学(化学英文版)
基 金:supported by the National Basic Research Program of China(2011CBA00700);the National High Technology Research and Development Program of China(2011AA050527);the National Natural Science Foundation of China(21403247,21173228,21103197)
摘 要:Semiconductor sensitized solar cells(SSSCs) are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment-friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized bismuth vanadate(Bi VO4) quantum dots by employing facile successive ionic layer adsorption and reaction(SILAR) deposition technique, which we then used as a sensitizer for solar energy conversion. The preliminary optimised oxide SSSC showed an efficiency of 0.36%, nearly 2 orders of magnitude enhancement compared with bare Ti O2, due to the narrow bandgap absorption of Bi VO4 quantum dots and intimate contact with the oxide substrate. This result not only demonstrates a simple method to prepare Bi VO4 quantum dots based solar cells, but also provides important insights into the low bandgap oxide SSSCs.Semiconductor sensitized solar cells(SSSCs) are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment-friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized bismuth vanadate(BiVO4) quantum dots by employing facile successive ionic layer adsorption and reaction(SILAR) deposition technique, which we then used as a sensitizer for solar energy conversion. The preliminary optimised oxide SSSC showed an efficiency of 0.36%, nearly 2 orders of magnitude enhancement compared with bare TiO2, due to the narrow bandgap absorption of BiVO4 quantum dots and intimate contact with the oxide substrate. This result not only demonstrates a simple method to prepare Bi VO4 quantum dots based solar cells, but also provides important insights into the low bandgap oxide SSSCs.
关 键 词:solar cells bismuth vanadate successive ionic layer adsorption reaction deposition SENSITIZER
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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