Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance  

作　　者：肖鹏博 张伟 曲天良 黄云 胡绍民 

机构地区：[1]College of Opto-electric Science and Engineering,National University of Defence Technology

出　　处：《Chinese Physics Letters》2015年第7期67-70,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11304384;the Research Project of National University of Defense Technology under Grant No JC13-07-02

摘　　要：Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically read＇ information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically read＇ information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.

关 键 词：BFO Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]