AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer  

作　　者：李祥东 张进成 邹瑜 马学智 刘畅 张苇杭 温慧娟 郝跃 

机构地区：[1]Key Laboratozy of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 [2]School of Electronic Science and Engineering, Nanjing University, Nanjing 210093

出　　处：《Chinese Physics Letters》2015年第7期156-159,共4页中国物理快报（英文版）

基　　金：Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002;National Natural Science Foundation of China under Grant Nos 11435010 and 61474086

摘　　要：We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.

关 键 词：AlGaN Channel High Electron Mobility Transistors with an Al_xGa x)N/GaN Composite Buffer Layer 

分 类 号：TN386[电子电信—物理电子学]