Preparation of Ta-Doped TiO2 Using Ta2O5 as the Doping Source  

作　　者：许程 林笛 牛继南 强颖怀 李大伟 陶春先 

机构地区：[1]School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 [2]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 [3]Shanghai Key Laboratory of Modern Optics System, School of Optics-Electrical and Computer Engineering University of Shanghai for Science and Technology, Shanghai 200093

出　　处：《Chinese Physics Letters》2015年第8期169-172,共4页中国物理快报（英文版）

基　　金：Supported by the Fundamental Research Funds for the Central Universities under Grant No 2012QNA03

摘　　要：A novel method for preparing Ta-doped Ti02 via using Ta2 05 as the doping source is proposed. The preparation process combines the hydrothernlal fluorination of Ta2O5 and the subsequent formation of Ta-doped TiO2 sol. The results show that the doped sample annealed at 393 K generates an unstable intermediate NH4 TiOF3, which converts into anatase TiO2 with the increase of temperature. After annealing at ≥673K, the Ta-doped TiO2 nanocrystals with the grain size 〈20nm are obtained. Both the XRD and TG-DSC results confirm that Ta doping prevents the anatase-rutile crystal transition of TiO2. The band gap values of the doped samples, as obtained by UV-vis diffuse reflectance spectra, are smaller than that of pure anatase TiO2. The first-principle pseudopotential method calculations indicate that Ta5＋ lies in the TiO2 lattice at the interstitial position.A novel method for preparing Ta-doped Ti02 via using Ta2 05 as the doping source is proposed. The preparation process combines the hydrothernlal fluorination of Ta2O5 and the subsequent formation of Ta-doped TiO2 sol. The results show that the doped sample annealed at 393 K generates an unstable intermediate NH4 TiOF3, which converts into anatase TiO2 with the increase of temperature. After annealing at ≥673K, the Ta-doped TiO2 nanocrystals with the grain size 〈20nm are obtained. Both the XRD and TG-DSC results confirm that Ta doping prevents the anatase-rutile crystal transition of TiO2. The band gap values of the doped samples, as obtained by UV-vis diffuse reflectance spectra, are smaller than that of pure anatase TiO2. The first-principle pseudopotential method calculations indicate that Ta5＋ lies in the TiO2 lattice at the interstitial position.

关 键 词：TiO TA Preparation of Ta-Doped TiO2 Using Ta2O5 as the Doping Source Figure XRD DSC 

分 类 号：O483[理学—固体物理]