Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire  

作　　者：闫未霞 张泽芳 郭晓慧 刘卫丽 宋志棠 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050 [2]University of Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2015年第8期181-184,共4页中国物理快报（英文版）

基　　金：Supported by the National Major Scientific and Technological Special Project during the Twelfth Five-year Plan Period under Grant No 2011ZX02704;the National Natural Science Foundation of China under Grant No 51205387;the Science and Technology Commission of Shanghai under Grant Nos llnm0500300 and 14XD1425300

摘　　要：Effects of abrasive concentration on material removal rate CMRR） and surtace quality m the chemical mecnamcal polishing （CMP） of light-emitting diode sapphire substrates are investigated. Experimental results show that the MRR increases linearly with the abrasive concentration, while the rms roughness decreases with the increasing abrasive concentration. In addition, the in situ coefficient of friction （COF） is also conducted during the sapphire polishing process. The results present that COF increases sharply with the abrasive concentration up to 20 wt% and then shows a slight decrease from 20wt% to 40wt%. Temperature is a product of the friction force that is proportional to COF, which is an indicator for the mechanism of the sapphire CMP.Effects of abrasive concentration on material removal rate CMRR） and surtace quality m the chemical mecnamcal polishing （CMP） of light-emitting diode sapphire substrates are investigated. Experimental results show that the MRR increases linearly with the abrasive concentration, while the rms roughness decreases with the increasing abrasive concentration. In addition, the in situ coefficient of friction （COF） is also conducted during the sapphire polishing process. The results present that COF increases sharply with the abrasive concentration up to 20 wt% and then shows a slight decrease from 20wt% to 40wt%. Temperature is a product of the friction force that is proportional to COF, which is an indicator for the mechanism of the sapphire CMP.

关 键 词：COF Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire CMP MRR 

分 类 号：TN312.8[电子电信—物理电子学] TN305.2