In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system  

作　　者：杨亿斌 柳铭岗 陈伟杰 韩小标 陈杰 林秀其 林佳利 罗慧 廖强 臧文杰 陈崟松 邱运灵 吴志盛 刘扬 张佰君 

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University [2]School of Physics and Engineering,Institute of Power Electronics and Control Technology,Sun Yat-Sen University

出　　处：《Chinese Physics B》2015年第9期362-366,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175);the National Basic Research Program of China(Grant No.2011CB301903);the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20110171110021);the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260);the International Science and Technology Collaboration Program of Guangdong Province,China(Grant No.2013B051000041);the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013);the National High Technology Research and Development Program of China(Grant No.2014AA032606);the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)

摘　　要：In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

关 键 词：stresses metal organic chemical vapor deposition wafer bowing in-situ reflectivity mapping 

分 类 号：O614.371[理学—无机化学]