Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers  

作　　者：马莉 沈光地 高志远 徐晨 

机构地区：[1]Key Laboratory of Opto-electronics Technology of Ministry of Education,Beijing University of Technology

出　　处：《Chinese Physics B》2015年第9期464-467,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.11204009);the Natural Science Foundation of Beijing,China(Grant No.4142005)

摘　　要：A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

关 键 词：light-emitting diodes Schottky current blocking layer current spreading 

分 类 号：TN312.8[电子电信—物理电子学] TM924.01[电气工程—电力电子与电力传动]