Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode  

作　　者：钟健 姚尧 郑越 杨帆 倪毅强 贺致远 沈震 周桂林 周德秋 吴志盛 张伯君 刘扬 

机构地区：[1]School of Physics and Engineering,Institute of Power Electronics and Control Technology,Sun Yat-Sen University [2]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University

出　　处：《Chinese Physics B》2015年第9期479-483,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51177175 and 61274039);the National Basic Research Program of China(Grant Nos.2010CB923200 and 2011CB301903);the Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20110171110021);the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260);the National High Technology Research and Development Program of China(Grant No.2014AA032606);the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013);the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)

摘　　要：The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.

关 键 词：AlGaN/GaN Schottky barrier diodes recessed anode etching damage TUNNELING 

分 类 号：TN311.7[电子电信—物理电子学]