Recovery of PMOSFET NBTI under different conditions  

作　　者：曹艳荣 杨毅 曹成 何文龙 郑雪峰 马晓华 郝跃 

机构地区：[1]School of Mechano-electric Engineering,Xidian University [2]Key Laboratory of Wide Band-gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University [3]School of Technical Physics,Xidian University

出　　处：《Chinese Physics B》2015年第9期484-488,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61404097,61334002,61106106,and 61176130);the Fundamental Research Funds for the Central Universities,China(Grant No.JB140415)

摘　　要：Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor（PMOSFET）, explain the various recovery phenomena, and find the possible processes of the recovery.Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor（PMOSFET）, explain the various recovery phenomena, and find the possible processes of the recovery.

关 键 词：negative bias temperature instability（NBTI） P-type metal–oxide–semiconductor field effect transistor RECOVERY 

分 类 号：TN386[电子电信—物理电子学] TP332[自动化与计算机技术—计算机系统结构]