Room-temperature ferromagnetism induced by Cu vacancies in Cu_x(Cu_2O)_(1-x) granular films  

作　　者：解新建 李好博 王卫超 卢峰 于红云 王维华 程雅慧 郑荣坤 刘晖 

机构地区：[1]School of Materials Science and Engineering,Hebei University of Technology [2]Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology,Nankai University [3]Center for Testing and Analyzing of Materials,School of Materials Science and Engineering,Tsinghua University [4]School of Physics,University of Sydney

出　　处：《Chinese Physics B》2015年第9期518-522,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11104148,51101088,and 51171082);the Tianjin Natural Science Foundation,China(Grant Nos.14JCZDJC37700 and 13JCQNJC02800);the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110031110034);the Fundamental Research Funds for the Central Universities,China

摘　　要：Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.

关 键 词：Cux（Cu2O）1-x granular films room-temperature ferromagnetism oxide diluted magnetic semiconductors 

分 类 号：TQ131.21[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]