一种量子阱结构发光器件的模拟与分析  

Simulation and Analysis of Luminance of a Kind of Quantum Dot in Quantum Well

作　　者：郭嘉[1] 刘艳艳[1] 耿卫东[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,天津300071

出　　处：《南开大学学报（自然科学版）》2015年第4期32-36,共5页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：国家青年科学基金(61204028)

摘　　要：基于Slivaco公司的TCAD软件构建一种新型量子点发光器件,以GaN基底作为电流传输层,在InGaN量子阱中植入InN量子点,并对该器件的电致发光特性进行了仿真.得到了该器件的伏安特性曲线、电致发光光谱曲线,以及量子点尺寸对其发光光谱的影响.仿真结果表明,在外加电压超过3.2V时,发光层的电子和空穴会产生强烈的复合发光;从0.1-2nm改变量子点的尺寸,发射峰从461nm移至481nm,红移了20nm,从2-10nm改变量子点尺寸,光谱基本没有变化.A new model create was created and some simulation was done using all-inorganic quantum dots based on Slivaco＇s TCAD software. In the model, the quantum dots are InN which are in InGaN quantum well, and the charge transport layer is GaN. The emission spectrum curve, volt-ampere characteristic curve and different EL intensity of quantum dots on different size were completed . The simulation results show that threshold voltage of the model is 3.2 V. The red shift of emission wavelength reaches 20 nm from 461 nm to 481 nm when the size of quantum dots changes from 0. 1 nm to 2 nm. However, the red shift almost never changes when the size of quantum dots changes from 2 nm to 10 nm.

关 键 词：InN量子点 模型构建 器件仿真 电致发光光谱 

分 类 号：TN383[电子电信—物理电子学]