High-performance Sb:SnO_2 Compact Thin Film Based on Surfactant-free and Binder-free Sb:Sn_3O_4 Suspension  

作　　者：Junhua Zhao Ruiqin Tan Ye Yang Wei Xu Jia Li Wenfeng Shen Guoqiang Wu Xufeng Yang Weijie Song 

机构地区：[1]College of Chemical and Material Engineering,Quzhou University [2]Faculty of Information Science and Engineering,Ningbo University [3]Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences

出　　处：《Journal of Materials Science & Technology》2015年第8期815-821,共7页材料科学技术（英文版）

摘　　要：Surfactant-free and binder-free antimony-doped tin oxide （ATO） transparent conducting thin films were fabricated through spin coating and rapid annealing processes, in which nanosheets were assembled into a compact structure via self-contracting high pressure. The mechanism of this compact thin film for- mation was further proposed and analyzed. The compact ATO thin film had a low root mean square （RMS） roughness of 5.03 nm. This surfactant-free and binder-free compact ATO thin film delivered low resistivity of 3.04 × 10^-2 Ω cm, stable resistivity which only increased 13% after exposing in 65% RH air for half a month, high transmittance of 92.70% at 550 nm, and high band gap energy of 4.07 eV. This effective strategy will provide new insight into the synthesis of low-cost and high-performance compact thin films.Surfactant-free and binder-free antimony-doped tin oxide （ATO） transparent conducting thin films were fabricated through spin coating and rapid annealing processes, in which nanosheets were assembled into a compact structure via self-contracting high pressure. The mechanism of this compact thin film for- mation was further proposed and analyzed. The compact ATO thin film had a low root mean square （RMS） roughness of 5.03 nm. This surfactant-free and binder-free compact ATO thin film delivered low resistivity of 3.04 × 10^-2 Ω cm, stable resistivity which only increased 13% after exposing in 65% RH air for half a month, high transmittance of 92.70% at 550 nm, and high band gap energy of 4.07 eV. This effective strategy will provide new insight into the synthesis of low-cost and high-performance compact thin films.

关 键 词：Antimony doped tin oxide Compact thin film Sn3O4 suspension Electrical properties Optical properties 

分 类 号：TQ423[化学工程] TB383.2[一般工业技术—材料科学与工程]