Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer  

作　　者：韩良顺 梁松 朱洪亮 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science

出　　处：《Chinese Optics Letters》2015年第8期50-53,共4页中国光学快报（英文版）

基　　金：supported by the National"863"Project of China(Nos.2013AA014502 and 2011AA010303);the National Nature Science Foundation of China(Nos.61474112,61320106013,61274071,61090392,and61006044);the National"973"Program of China(No.2012CB934202)

摘　　要：We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To well-preserve material quality in the laser region, thermal-oxide SiO2 is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator＇s extinction ratio （ER） caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation band- width of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To well-preserve material quality in the laser region, thermal-oxide SiO2 is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator＇s extinction ratio （ER） caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation band- width of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.

关 键 词：Buffer layers Distributed feedback lasers FABRICATION Ion implantation IONS Light modulators Light sources Light transmission Modulators Monolithic integrated circuits Semiconductor quantum wells 

分 类 号：TN248[电子电信—物理电子学]