SiGe HBT的线性度研究（英文）  

The Study of the Linearity of SiGe HBT

作　　者：张贵恒 张为[1] 付军[2] 王玉东[2] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]清华大学微电子学研究所,北京100084

出　　处：《固体电子学研究与进展》2015年第2期139-144,共6页Research & Progress of SSE

摘　　要：应用一种改进的片上线性度测试方法来对上海华虹宏力半导体制造有限公司生产的SiGe HBT进行测试,得到了一个较好的测试结果,同时对其线性度随偏置情况的变化以及引起变化的机制进行了分析和讨论。通过分析表明:在集电极偏置电流较小时,SiGe HBT的线性度主要受器件跨导和雪崩倍增效应的限制;在中等大小的集电极偏置电流下,SiGe HBT的非线性主要由集电结势垒电容所产生;在大的集电极偏置电流下,大电流效应是产生非线性的主要原因。Through an improved method of on-wafer linearity measurement of SiGe heterojunction bipolar transistors（HBTs）fabricated by Shanghai Huahong Grace Semiconductor Manufacturing Corporation,the better measurement data were obtained.Then the dependency of device linearity on the bias condition was analyzed and the underlying mechanism was discussed.The study results show that the linearity is limited by the trans-conductance and the avalanche multiplication effect in the low collector bias current;the collector junction barrier capacitor is the dominant nonlinearity in the middle collector bias current;the large current effect is the main reason for the nonlinearity in the large collector bias current.

关 键 词：锗化硅异质结晶体管 负载牵引系统 线性度 非线性因素 

分 类 号：TN431[电子电信—微电子学与固体电子学]