溶剂蒸汽压对溶液法制备PVP绝缘膜的影响  

The Influences of Solvent Vapor Pressure on the PVP Films by Solution Process

作　　者：刘泉水[1] 韩先虎[1] 钱峰[1] 钟传杰[1] 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122

出　　处：《固体电子学研究与进展》2015年第2期202-206,共5页Research & Progress of SSE

基　　金：国家自然基金资助项目(60776056)

摘　　要：利用溶剂蒸汽辅助旋涂和辅助退火(SVA)工艺制备了PVP栅绝缘膜,并研究了SVA过程中溶剂蒸汽压对PVP膜特性的影响。根据椭偏光谱的柯西模型和有效介质近似(EMA)模型,对椭偏谱参数拟合分析得到了PVP膜光学参数与其微结构的关系。拟合结果表明,随着蒸汽压的增大,PVP膜总厚度(均小于30nm)和粗糙层厚度均降低,膜致密性得到改善。由这种膜构成的MIS结构的J-V特性测试结果显示,当蒸汽压由0.21增加至0.82时,在电场为5 MV/cm的条件下,其漏电流密度由1.04×10-6 A/cm2降至1.42×10-7 A/cm2。而且在蒸汽压为0.82时可得到膜厚仅约为20nm、单位面积电容达到145nF/cm2的超薄PVP膜。The polyvinyl pyrrolidone（PVP）gate insulating films were fabricated by solvent vapor-assisted spin coating and solvent vapor annealing（SVA）,and the influences of solvent vapor pressure on the PVP films were studied.The relationship between the microstructure and the optical parameters of the PVP gate insulating film were analyzed based on Cauchy model and EMA（effective medium approximation）model of spectroscopic ellipsometry.The results show that the thickness of the total films（less than 30nm）and roughness layers are decreased,and the density of the films is improved with the increase of the vapor pressure.According to the J-V characteristics of MIS structure which is made of this kind of film,it was shows that the leakage current density is decreased from 1.04×10^-6 A/cm^2 to 1.42×10^-7 A/cm^2 at 5 MV/cm as the vapor pressure increases from 0.21 to 0.82,and the ultra-thin PVP film（approximately 20nm）whose capacitance per unit area reaches 145nF/cm^2 is made when the pressure is 0.82.

关 键 词：超薄PVP膜 溶剂蒸汽辅助退火 溶剂蒸汽压 椭偏光谱 

分 类 号：TN386.2[电子电信—物理电子学]