S波段280W GaN内匹配功率管的设计与实现  

Design and Implement of an S-band 280W GaN Internally Matched Transistor

作　　者：姚实[1] 唐世军[1] 任春江[1] 钱峰[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2015年第4期321-324,391,共5页Research & Progress of SSE

摘　　要：本文实现了一种基于自主50V工作GaN HEMT工艺的S波段内匹配功率管。以S参数和负载牵引结果进行内匹配电路设计,采取两管芯并联的方式实现大功率输出。应用微波仿真软件ADS对其进行优化,得到良好仿真结果并给出最终测试数据。在48V漏电压、1 ms周期、10%占空比测试条件下,3.1~3.4GHz频率范围内,输出功率超过54.5dBm,功率增益大于13.5dB,功率附加效率超过50%。Based on a domestically made GaN HEMT which operates at 50 Vdrain voltage,an S-band internally matched power amplifier was realized.Design of the matching network was conducted by the test results of S-parameters and Load-pull.Using two paralleled GaN HEMT dies,the internal matching transistor demonstrated high output power.Optimization design of the transistor was completed with microwave simulation software ADS.Simulation results were obtained and the test data was presented.During its working band of 3.1GHz to 3.4GHz,the output power is greater than 54.5dBm,with PAE more than 50%,and the power gain can reach13.5dB under conditions of 48 Vdrain voltage,1ms period,10% duty ratio.

关 键 词：氮化镓高电子迁移率晶体管 内匹配 功率放大器 S波段 

分 类 号：TN323.4[电子电信—物理电子学] TN722.75