5.8～6.2GHz高效率InGaP/GaAs HBT J类功率放大器  

A 5.8～6.2GHz High Efficiency InGaP/GaAs HBT Class-J Power Amplifier

作　　者：郑瑞青 郑耀华[1] 章国豪 

机构地区：[1]广东工业大学信息工程学院,广州510006

出　　处：《固体电子学研究与进展》2015年第4期340-345,共6页Research & Progress of SSE

摘　　要：介绍了一个工作在5.8~6.2GHz的高效率磷化镓铟/砷化镓异质结双极型晶体管（InGaP/GaAs HBT）功率放大器。设计了具有良好带宽性能的J类输出匹配网络,并通过InGaP/GaAs HBT单片微波集成电路（MMIC）技术和射频基板封装技术得以实现。在5.8~6.2GHz的频率范围内,用连续波（CW）信号测试放大器得到的1dB压缩点输出功率都大于31dBm,饱和输出功率都大于32dBm、最大的附加功率效率（PAE）都大于56%。This paper presented a high efficiency InGaP/GaAs HBT power amplifier which works in the frequency range from 5.8GHz to 6.2GHz.A Class-J output matching network with a good bandwidth performance was designed and then implemented using the InGaP/GaAs HBT monolithic microwave integrated circuits（MMIC）technology and radio frequency（RF）laminate packaging technology.In the frequency range from 5.8GHz to 6.2GHz,the power amplifier was measured with a continuous wave（CW）signal and the output power at 1dB compression point is greater than 31dBm;the saturated output power is greater than 32dBm;the highest PAEis greater than 56%.

关 键 词：J类功率放大器 效率 磷化镓铟/砷化镓异质结双极型晶体管 单片微波集成电路 

分 类 号：TN722.75[电子电信—电路与系统] TN322.8