CuBi_2(V_2O_5)掺杂Li_2O-ZnO-TiO_2系陶瓷的低温烧结和微波介电性能  

Low-temperature sintering and microwave dielectric properties of CuBi_2(V_2O_5)-doped Li_2O-ZnO-TiO_2 ceramics

作　　者：何茗[1] 

机构地区：[1]成都工业学院通信工程系,四川成都611730

出　　处：《电子元件与材料》2015年第9期43-45,共3页Electronic Components And Materials

基　　金：四川省教育厅基金资助项目(No.11ZB015)

摘　　要：以CuBi2(V2O5)(简称为CBV)低熔点氧化物为烧结助剂,采用传统的固相烧结工艺制备了CBV掺杂的Li2O-ZnO-TiO2系微波陶瓷。并利用XRD、SEM等研究了Li2O-ZnO-TiO2系陶瓷的烧结行为、物相组成、显微结构及微波介电性能等。结果表明:当CBV掺杂量为质量分数3.25%时,875℃烧结的Li2O-ZnO-TiO2陶瓷微波具有良好的微波介电性能:εr=25.63,Q·f=53400GHz,τf=–5.27×10–6/℃。CuBi2（V2O5）（CBV for short） doped Li20-ZnO-TiO2, system ceramics were prepared by the conventional solid-state reaction, using CuBi2（V2O5） as sintering additive, which was common low melting point oxide. The behavior of sintering, phase composition, microstrceture and microwave dielectric properties of Li2O-ZnO-TiO2 system ceramics were characterized or measured by means of XRD and SEM. The results show that, the ceramic doped with 3.25% （mass fraction） CBV sintered at 875 ℃ shows good microwave dielectric properties： εr=25.63, Q ·f=53 400 GHz, τf= -5.27×10^-6/℃.

关 键 词：CBV Li2O-ZnO-TiO2 陶瓷 低温烧结 微波 介电性能 

分 类 号：TM28[一般工业技术—材料科学与工程]