无机固体材料中的忆阻效应  

Memristive Effects in Inorganic Solid Materials

作　　者：吴小峰[1] 袁龙[1] 黄科科[1] 冯守华[1] 

机构地区：[1]吉林大学化学学院,无机合成与制备化学国家重点实验室,长春130012

出　　处：《无机化学学报》2015年第9期1726-1738,共13页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.21427802,21131002,21201075)资助项目

摘　　要：缺陷调控是固体化学中的基本问题,也是决定材料性能的核心要素。基于缺陷调控的忆阻效应将给未来电子信息领域带来全新的变革。本文综述了无机固体材料中忆阻效应的研究进展,主要总结了忆阻效应的产生机制和忆阻材料的类型,结合原子级p-n结的相关工作,提出深入明确电场下缺陷迁移机制将是从无机固体化学角度研究忆阻效应的重要方向。Crystal defects are fundamental issues that define the physical and chemical properties in inorganic solid state chemistry. Memristive effects, which are mainly controlled by defects migration in solid state, will bring new revolution to the future electronic information industry. In this review, recent progress of memrisive effect in inorganic solid state materials was summarized. Main mechanism and material types are discussed in detail. These phenomena are highly related to atomic-scale p-n junction in manganite. This review indicates that defect transport mechanism study in electric field is an very important aspects in memristive applications.

关 键 词：忆阻器 忆阻机制 缺陷调控 原子级p-n结 

分 类 号：O611.3[理学—无机化学]