Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures  

作　　者：周书星 齐鸣 艾立鹍 徐安怀 汪丽丹 丁芃 金智 

机构地区：[1]State Key Laboratory of Functional Materials for lnformatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]Microveave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029

出　　处：《Chinese Physics Letters》2015年第9期112-115,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61434006

摘　　要：The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.

关 键 词：InP InGaAs Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures Effects of Si 

分 类 号：TN386[电子电信—物理电子学]