Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon  

作　　者：毛清华 刘军林 吴小明 张建立 熊传兵 莫春兰 张萌 江风益 

机构地区：[1]National Engineering Technology Research Center for LED on Si Substrate,Nanchang University

出　　处：《Journal of Semiconductors》2015年第9期26-29,共4页半导体学报（英文版）

基　　金：Project supported by the Key Program of the National Natural Science Foundation of China(No.61334001);the National Natural Science Foundation of China(No.51072076);the National High Technology Research and Development Program of China(Nos.2011AA03A101,2012AA041002);the National Key Technology Research and Development Program of China(No.2011BAE32B01);the Fund for Less Developed Regions of the National Natural Science Foundation of China(No.11364034)

摘　　要：The unintentional carbon doping concentration of GaN films grown by low pressure metal organic chemical vapor deposition （LP-MOCVD） depends strongly on the growth rate. The concentration of carbon is varied from 2.9 × 1017 to 5.7 × 10^18 cm-3 when the growth rate increases from 2.0 to 7.2 μm/h, as detected by secondary ion mass spectroscopy. It is shown that the presence of N vacancies give rises to high carbon concentration. We show that a reduction of the carbon concentration by one order of magnitude compared to the regular sample with nearly same growth rate can be achieved by operating at an extremely high NH3 partial pressure during growth. The intensity ratios of yellow and blue luminescence to band edge luminescence in the samples are found to depend significantly on carbon concentration. The present results demonstrate direct and quantitative evidence that the carbon related defects are the origin of yellow and blue luminescence.The unintentional carbon doping concentration of GaN films grown by low pressure metal organic chemical vapor deposition （LP-MOCVD） depends strongly on the growth rate. The concentration of carbon is varied from 2.9 × 1017 to 5.7 × 10^18 cm-3 when the growth rate increases from 2.0 to 7.2 μm/h, as detected by secondary ion mass spectroscopy. It is shown that the presence of N vacancies give rises to high carbon concentration. We show that a reduction of the carbon concentration by one order of magnitude compared to the regular sample with nearly same growth rate can be achieved by operating at an extremely high NH3 partial pressure during growth. The intensity ratios of yellow and blue luminescence to band edge luminescence in the samples are found to depend significantly on carbon concentration. The present results demonstrate direct and quantitative evidence that the carbon related defects are the origin of yellow and blue luminescence.

关 键 词：GaN optoelectronic devices carbon contamination high growth rate yellow luminescence 

分 类 号：TN304.05[电子电信—物理电子学]