Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth(TGSG) method  

作　　者：杨睿 介万奇 孙晓燕 杨敏 

机构地区：[1]State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University

出　　处：《Journal of Semiconductors》2015年第9期41-46,共6页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2011CB610406);the National Natural Science Foundation of China(No.51372205);the 111 Project of China(No.B08040);the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20116102120014);the NWPU Foundation for Fundamental Research;the Research Fund of the State Key Laboratory of Solidification Processing(NWPU)

摘　　要：The properties of undoped, Cr-doped, and In-doped bulk ZnTe crystals grown by the TGSG method were compared. Cr/In-doping leads to a slight red-shift of the absorption edge. Cr-doping also creates two characteristic absorption bands, centered at about 1750 nm and beneath the fundamental absorption edge. However, the fundamental reflectance spectra are not sensitive to the dopants. The resistivity of undoped, Cr-doped, and In-doped ZnTe is about 102 Ω.cm, 10^3 Ω.cm, and 10^8 Ω-cm, respectively. Only In-doped ZnTe has an IR transmittance higher than 60% in the range of 500 to 4000 cm-1. However, the IR transmittance of Cr-doped ZnTe is very low and decreases greatly as the wavenumber increases, which is mainly attributed to the scattering effects caused by some defects generated by Cr-doping.The properties of undoped, Cr-doped, and In-doped bulk ZnTe crystals grown by the TGSG method were compared. Cr/In-doping leads to a slight red-shift of the absorption edge. Cr-doping also creates two characteristic absorption bands, centered at about 1750 nm and beneath the fundamental absorption edge. However, the fundamental reflectance spectra are not sensitive to the dopants. The resistivity of undoped, Cr-doped, and In-doped ZnTe is about 102 Ω.cm, 10^3 Ω.cm, and 10^8 Ω-cm, respectively. Only In-doped ZnTe has an IR transmittance higher than 60% in the range of 500 to 4000 cm-1. However, the IR transmittance of Cr-doped ZnTe is very low and decreases greatly as the wavenumber increases, which is mainly attributed to the scattering effects caused by some defects generated by Cr-doping.

关 键 词：ZNTE Cr/In doping crystal growth defect electrical and optical properties 

分 类 号：TN304.2[电子电信—物理电子学]