Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO_2 after high temperature oxidation  

作　　者：李妍月 邓小川 刘云峰 赵艳黎 李诚瞻 陈茜茜 张波 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [2]Institute of Optics and Electronics,Chinese Academy of Sciences [3]Power Electronics Business Unit,Zhuzhou CSR Times Electric Co.,Ltd.

出　　处：《Journal of Semiconductors》2015年第9期58-61,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61234006);the State Grid of China(No.sgri-wd-71-14-003)

摘　　要：The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated using capacitance-voltage （C V） measurements. The experimental results show that the interface states density （Dit） can be obviously decreased by the POA in NO ambient （NO-POA） and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Dit on POA temperature and time has been also discussed in detail.The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated using capacitance-voltage （C V） measurements. The experimental results show that the interface states density （Dit） can be obviously decreased by the POA in NO ambient （NO-POA） and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Dit on POA temperature and time has been also discussed in detail.

关 键 词：C-V characteristics 4H-SiC MOS post-oxidation annealing SiC/SiO2 

分 类 号：TN304.2[电子电信—物理电子学]