Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure  

作　　者：韩锴 王晓磊 王文武 

机构地区：[1]Department of Physics and Electronic Science,Weifang University [2]Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第9期71-74,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61404093,50932001);the Doctoral Scientific Research Foundation of Weifang University(No.014BS02)

摘　　要：The physical origin of the flatband voltage （VFB） roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions.The physical origin of the flatband voltage （VFB） roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions.

关 键 词：high-k dielectric band alignment VFB roll off 

分 类 号：TN386[电子电信—物理电子学]