A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate  

作　　者：樊世燕 刘恩海 张军 刘玉岭 王磊 林凯 孙鸣 石陆魁 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology [2]School of Computer Science and Engineering,Hebei University of Technology [3]National Ocean Technology Center

出　　处：《Journal of Semiconductors》2015年第9期143-148,共6页半导体学报（英文版）

基　　金：Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308);the Natural Science Foundation of Hebei Province,China(No.F2013202104)

摘　　要：The influence of the components of an alkali polishing slurry and the mutual influences on the Cu polishing rate were investigated by a CMP polishing rate prediction model established with a modified artificial neural network based on the artificial bee colony algorithm. The quantitative method of sensitivity analysis was employed to fulfill the purpose ofquantizing the influence on the polishing rate. The result of the analysis indicates that under certain CMP conditions, the Cu polishing rate was controlled by the silica abrasives, the FA/O chelating agent, the surfactant and the oxidant agent in the polishing slurry. Such factors showed the different sensitivity coefficients with 0.78, 0.53, 0.29 and 0.19 respectively on all the sample points. The mutual influence between the FA/O chelating agent and the oxidant agent on the polishing rate seemed obviously strongest when the proportion of them was 2 to 7, with the global sensitivity coefficients between 5 to 9; the mutual influence of silica abrasives and oxidant on the polishing rate was greater as the proportion of the above additives was beyond 5, with the global sensitivity coefficients between 2.5 and 6; the mutual influence of the surfactant and oxidant on the polishing rate was not obvious, with global sensitivity coefficients less than 3. Thus, it provides a kind of effective method for quantitating the influence with the components of the CMP alkali slurry on the polishing rate.The influence of the components of an alkali polishing slurry and the mutual influences on the Cu polishing rate were investigated by a CMP polishing rate prediction model established with a modified artificial neural network based on the artificial bee colony algorithm. The quantitative method of sensitivity analysis was employed to fulfill the purpose ofquantizing the influence on the polishing rate. The result of the analysis indicates that under certain CMP conditions, the Cu polishing rate was controlled by the silica abrasives, the FA/O chelating agent, the surfactant and the oxidant agent in the polishing slurry. Such factors showed the different sensitivity coefficients with 0.78, 0.53, 0.29 and 0.19 respectively on all the sample points. The mutual influence between the FA/O chelating agent and the oxidant agent on the polishing rate seemed obviously strongest when the proportion of them was 2 to 7, with the global sensitivity coefficients between 5 to 9; the mutual influence of silica abrasives and oxidant on the polishing rate was greater as the proportion of the above additives was beyond 5, with the global sensitivity coefficients between 2.5 and 6; the mutual influence of the surfactant and oxidant on the polishing rate was not obvious, with global sensitivity coefficients less than 3. Thus, it provides a kind of effective method for quantitating the influence with the components of the CMP alkali slurry on the polishing rate.

关 键 词：polishing slurry polishing rate sensitivity analysis artificial neural network artificial bee colonyalgorithm 

分 类 号：TN305.2[电子电信—物理电子学]