The Influences of Controlling Sintering Mechanism on Electrical Properties of Multilayer PTCR Chip  

作　　者：黄汉华 陈勇 李璋 YANG Huai YANG Zhao GUO Jiacheng YANG Yan 

机构地区：[1]Faculty of Physics and Electronic Technology, Hubei University [2]Engineering Research Center of Nano-Geo Materials of Ministry of Education, China University of Geosciences

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2015年第4期674-678,共5页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the National Natural Science Foundation of China(No.51202063);the Hubei Provincial Department of Education(No.Q20111009)

摘　　要：Experiments were designed to investigate the influence of controlling sintering mechanism on electrical properties of multilayer PTCR chip. During the preparation process, heating rate, sintering temperature, high-temperature holding time and cooling method were respectively regulated to prepare multilayer PTCR chip with good performance. After the process of organic casting, the casting PTCR green films were sintered at 1 260-1 280 ~C for 0.5 h at reduction atmosphere, which was heated at the rate of 400 ℃/h. Then selecting 300 ℃/h as the cooling rate, the ceramics were oxidated at 850 ℃ for 1 h. The prepared multilayer PTCR chips exhibited room temperature resistivity of below 100 Ω.cm, and resistance rising rate more than 104 unit through the Curie temperature.Experiments were designed to investigate the influence of controlling sintering mechanism on electrical properties of multilayer PTCR chip. During the preparation process, heating rate, sintering temperature, high-temperature holding time and cooling method were respectively regulated to prepare multilayer PTCR chip with good performance. After the process of organic casting, the casting PTCR green films were sintered at 1 260-1 280 ~C for 0.5 h at reduction atmosphere, which was heated at the rate of 400 ℃/h. Then selecting 300 ℃/h as the cooling rate, the ceramics were oxidated at 850 ℃ for 1 h. The prepared multilayer PTCR chips exhibited room temperature resistivity of below 100 Ω.cm, and resistance rising rate more than 104 unit through the Curie temperature.

关 键 词：PTCR sintering mechanism MULTILAYER BATIO3 

分 类 号：TQ174.65[化学工程—陶瓷工业]