刻蚀压强对制备碳纳米管形貌的影响  

The Effect of Catalyst at Different Etched Pressure on the Morphology of Carbon Nanotubes

作　　者：席彩萍[1] 

机构地区：[1]渭南师范学院物理与电气工程学院,陕西渭南714000

出　　处：《材料开发与应用》2015年第4期70-73,共4页Development and Application of Materials

基　　金：陕西省科技厅科研基金资助项目(2013JK0989);渭南市科技局项目(2013JCYJ-3);渭南师范学院特色学科建设项目资助(14TSXK06)

摘　　要：采用等离子体增强化学气相沉积技术,以C2H2、H2和N2为反应气体,制备出碳纳米管薄膜,利用扫描电镜(SEM)对其进行表征。结果表明:催化剂刻蚀压强对碳纳米管薄膜的生长起着重要作用,获得定向性好、密度适中、杂质缺陷少的碳纳米管的最佳的刻蚀压强为200 Pa。Carbon nanotubes were obtained by plasma enhanced chemical vapor deposition with acetylene,hydrogen and nitrogen as gases and were characterized by scanning electron microscopy（ SEM）. Experimental results show that catalyst at different etched pressure plays an important role in the growth of carbon nanotubes,the optimum etched pressure of the carbon nantubes with vertical arrangement,moderate density,little impurity and defect is 200 Pa.

关 键 词：碳纳米管 刻蚀压强 扫描电镜(SEM) 

分 类 号：O484[理学—固体物理]