烧结工艺对ITO靶材致密度与电阻率的影响  

Effect of sintering process on the density and resistivity of ITO target materials

作　　者：张明杰[1,2] 陈敬超[1,2] 彭平[1,2] 于杰 

机构地区：[1]昆明理工大学稀贵及有色金属先进材料教育部重点实验室 [2]云南省新材料制备与加工重点实验室,昆明650093

出　　处：《粉末冶金材料科学与工程》2015年第4期623-630,共8页Materials Science and Engineering of Powder Metallurgy

基　　金：新国家自然科学联合基金资助项目(u0837601);新国家基金资助项目(50874054);云南省稀贵金属微结构与性能创新团队项目(2009CI003);云南省自然科学基金资助项目(2008CD087)

摘　　要：以等离子电弧法制备的铟-锡氧化物(indium-tin oxide,ITO)纳米粉末为原料,采用冷等静压-烧结工艺制备ITO靶材,用排水法和涡流导电仪分别对ITO靶材的致密度和电阻率进行测量,研究烧结温度、升温速率、烧结时间以及气氛压力对靶材致密度和电阻率的影响。结果表明,在烧结温度为1 550℃、升温速率为500℃/h、烧结时间8 h、氧气气氛压力为0.02 MPa条件下制备的ITO靶材致密度和电阻率分别为99.54%和1.829×10-4?·cm,能够满足高端光伏、液晶显示屏(LCD)等领域对ITO靶材致密度和电阻率的要求。The influences of the sintering temperature, heating rate, sintering time and atmosphere pressure on the density and resistivity of （indium-tin oxide, ITO） target prepared by cold isostatic pressing-sintering process using the plasma arc nanoscale ITO powder as the raw material were studied. The density and resistivity of ITO target were measured by drainage and eddy conductivity meter, respectively. The results show that the density and resistivity of the ITO target prepared at the sintering temperature of 1 550 ℃, heating rate of 500℃/h, sintering time of 8 h, oxygen atmosphere pressure of 0.02 MPa are 99.54% andl.829× 10-4 Ω.cm, respectively, which can meet the application requirements of high-grade photovoltaic, liquid crystal display （LCD） and other areas on the density and resistivity oflTO target.

关 键 词：烧结温度 升温速率 烧结时间 气氛压力 电阻率 

分 类 号：TB34[一般工业技术—材料科学与工程] TB332