Raman Scattering Spectrum Analysis of GaP andIts Luminous Materialsr  

Raman Scattering Spectrum Analysis of GaP and Its luminous Materials

作　　者：ZHANGFujia QILi 等 

机构地区：[1]LanzhouUniversity,Lanzhou730000,CHN [2]BijingMechanicalIndustryInstitute,Beijing100083,CHN

出　　处：《Semiconductor Photonics and Technology》1997年第1期6-13,共8页半导体光子学与技术（英文版）

基　　金：National Natural Science Foundation of China

摘　　要：Abstract: The Raman scattering spectra of n- type GaP(doped S) single crystal and red and green luminous materials grown on the n - type GaP (doped S) single crys-tal substrate by liquid - phase epitaxy are analyed. The results show that the spectra of GaP single crystal and its luminous materials include not only the first - order longitudi-nal optical photons and transverse optical phonons Raman scattering peaks, but also the peaks of the bound excitons, bound electrons and bound holes.Abstract: The Raman scattering spectra of n- type GaP(doped S) single crystal and red and green luminous materials grown on the n - type GaP (doped S) single crys-tal substrate by liquid - phase epitaxy are analyed. The results show that the spectra of GaP single crystal and its luminous materials include not only the first - order longitudi-nal optical photons and transverse optical phonons Raman scattering peaks, but also the peaks of the bound excitons, bound electrons and bound holes.

关 键 词：LPE LUMINESCENCE Raman Spectrum Semiconductor Materials 

分 类 号：TN304.23[电子电信—物理电子学]