Uncooled InAs_(0.09)Sb_(0.91) photoconductors with cutoff wavelength extended to 11.5 μm  

作　　者：高玉竹 龚秀英 周冉 李继军 冯彦斌 Takamitsu Makino Hirofumi Kan 

机构地区：[1]College of Electronics and Information Engineering,Tongji University [2]Huaxing Infrared Device Company [3]Hamamatsu Photonics K.K.,5000 Hirakuchi,Hamakita 434-8601,Japan

出　　处：《Optoelectronics Letters》2015年第5期352-355,共4页光电子快报（英文版）

基　　金：supported by the Fundamental Research Funds for the Central Universities in China

摘　　要：Uncooled In As Sb photoconductors were fabricated. The photoconductors were based on In As0.05Sb0.95 and In As0.09Sb0.91 thick epilayers grown on In As substrates by melt epitaxy(ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of In As0.09Sb0.91 detectors is obviously extended to 11.5 μm, and that of In As0.05Sb0.95 detectors is 8.3 μm. At room temperature, the peak detectivity of Dλp* at wavelength of 6.8 μm and modulation frequency of 1 200 Hz is 1.08×109 cm·Hz1/2·W-1 for In As0.09Sb0.91 photoconductors, the detectivity D* at wavelength of 9 μm is 7.56×108 cm·Hz1/2·W-1, and that at 11 μm is 3.92×108 cm·Hz1/2·W-1. The detectivity of In As0.09Sb0.91 detectors at the wavelengths longer than 9 μm is about one order of magnitude higher than that of In As0.05Sb0.95 detectors, which rises from the increase of arsenic(As) composition in In As0.09Sb0.91 materials.

关 键 词：cutoff Sb Uncooled InAs thick magnitude immersion arsenic longer epitaxy spectrometer 

分 类 号：TN303[电子电信—物理电子学]