TVS二极管HEMP响应特性统计分析  

Statistical Analysis on the Response Characteristic for TVS Diode in HEMP

作　　者：杜鸣心[1] 石立华[1] 周颖慧[1] 富志凯[1] 

机构地区：[1]解放军理工大学电磁环境效应与电光工程国家级重点实验室,南京210007

出　　处：《环境技术》2015年第4期50-54,共5页Environmental Technology

基　　金：国家自然科学基金(编号:51477183;51407198)

摘　　要：针对瞬态电压抑制(TVS)二极管对高空核爆炸产生的电磁脉冲(HEMP)的防护问题,研究了不同类型脉冲传导注入至被测电路,分别测得了限幅电压、损伤阈值电压、损毁阈值电压和损毁阈值电流,计算出了不同类型脉冲作用下损伤概率和损毁概率。结果表明被测电路受到了注入脉冲次数累积效应的影响,脉冲次数越多,其阈值电压和阈值电流会越低。研究结果为微电子设备的电磁脉冲防护及HEMP防护中的器件选择提供了参考。To investigate the transient voltage suppression diodes（TVS） defending against the electromagnetic pulse generated by high-altitude nuclear explosions（HEMP）, different types of impulses injecting to the circuit has been researched. In this paper, the limiting voltage, breakdown threshold voltage, damage threshold voltage and damage threshold current are measured. Breakdown probability and damage probability caused by different types of pulses are also calculated. The results show that accumulative effect has a significant influence on the circuit. The more the number of pulses is, the lower threshold voltage and current will be. This study provides references for electromagnetic pulse protection in microelectronic devices and selecting devices to defend against HEMP.

关 键 词：TVS二极管 HEMP 累积效应 损伤概率 损毁概率 

分 类 号：TN345[电子电信—物理电子学]