Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation  

作　　者：郑齐文 崔江维 周航 余德昭 余学峰 陆妩 郭旗 任迪远 

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences [2]Xinjiang Key Laboratory of Electronic Information Material and Device [3]University of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2015年第10期380-385,共6页中国物理B（英文版）

摘　　要：Functional failure mode of commercial deep sub-micron static random access memory（SRAM） induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.Functional failure mode of commercial deep sub-micron static random access memory（SRAM） induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.

关 键 词：total dose irradiation static random access memory functional failure mode 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TN959.21[自动化与计算机技术—计算机科学与技术]